InSb∕AlInSb quantum-well light-emitting diodes

Organic quantum well light emitting diodes

This work reports on simulation and experimental investigation into the charge transport and electroluminescence in a quantum well (QW) organic light emitting diode (OLED) consisting of a N,N′-di(naphthalene-1-yl)-N,N′-diphenylbenzidine (NPB) as a hole transport layer, tris (8-hydroxyquinoline) aluminum (Alq3) as a potential barrier and electron transporting layer, and rubrene as potential well...

InSb/AlInSb quantum-well light-emitting diodes

We have investigated the room-temperature electroluminescent properties of InSb/AlxIn1−xSb quantum-well light-emitting diodes. The maximum emission from diodes containing quantum wells occurred at significantly higher energies than the band gap of InSb. Close agreement between experimental and theoretical data confirms that recombination occurs within the quantum well. © 2006 American Institute...

InGaN/GaN quantum well interconnected microdisk light emitting diodes

Atomically thin quantum light-emitting diodes

Transition metal dichalcogenides are optically active, layered materials promising for fast optoelectronics and on-chip photonics. We demonstrate electrically driven single-photon emission from localized sites in tungsten diselenide and tungsten disulphide. To achieve this, we fabricate a light-emitting diode structure comprising single-layer graphene, thin hexagonal boron nitride and transitio...

Efficiency droop behaviors of InGaN/GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness

InGaN/GaN multiple-quantum-well MQW light-emitting diodes with varied InGaN quantum well thicknesses are fabricated and characterized. The investigation of luminous efficiency versus current density reveals a variety of efficiency droop behaviors. It is found that the efficiency droop can be drastically reduced by increasing the quantum well thickness of the MQW structures. On the other hand, r...